Invention Grant
- Patent Title: Stress-generating shallow trench isolation structure having dual composition
- Patent Title (中): 应力产生浅沟槽隔离结构具有双重组成
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Application No.: US13419927Application Date: 2012-03-14
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Publication No.: US08728905B2Publication Date: 2014-05-20
- Inventor: Huilong Zhu , Jing Wang
- Applicant: Huilong Zhu , Jing Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Yuanmin Cai
- Main IPC: H01L21/762
- IPC: H01L21/762

Abstract:
A shallow trench isolation structure containing a first shallow trench isolation portion comprising the first shallow trench material and a second shallow trench isolation portion comprising the second shallow trench material is provided. A first biaxial stress on at least one first active area and a second bidirectional stress on at least one second active area are manipulated separately to enhance charge carrier mobility in middle portions of the at least one first and second active areas by selection of the first and second shallow trench materials as well as adjusting the type of the shallow trench isolation material that each portion of the at least one first active area and the at least one second active area laterally abut.
Public/Granted literature
- US20120171842A1 STRESS-GENERATING SHALLOW TRENCH ISOLATION STRUCTURE HAVING DUAL COMPOSITION Public/Granted day:2012-07-05
Information query
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