Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor

Invention Grant

US08728907B2 Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor 有权

Title translation: 用于制造集成电路装置的方法，包括隔离沟槽和场效应晶体管

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Patent Title: Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor
Patent Title (中): 用于制造集成电路装置的方法，包括隔离沟槽和场效应晶体管
Application No.: US12941527

Application Date: 2010-11-08
Publication No.: US08728907B2

Publication Date: 2014-05-20
Inventor: Ronald Kakoschke , Franz Schuler
Applicant: Ronald Kakoschke , Franz Schuler
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Priority: DE10321742 20030514
Main IPC: H01L21/8242
IPC: H01L21/8242

Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor

Abstract:

A memory circuit arrangement and a fabrication method are disclosed. The memory circuit arrangement has a memory cell area. The memory cell area contains memory cell transistors, one column of which are selected using a triple gate area selection transistor. The transistor has gate area that extends into isolating trenches. The isolating trenches isolate the memory cell in different columns of the memory cell array.

Abstract(Chinese):

公开了一种存储器电路装置和制造方法。存储器电路装置具有存储单元区域。存储单元区域包含存储单元晶体管，其一列使用三栅极区域选择晶体管来选择。晶体管具有延伸到隔离沟槽中的栅极区域。隔离沟槽隔离存储单元阵列的不同列中的存储单元。

Public/Granted literature

US20110053341A1 INTEGRATED CIRCUIT ARRANGEMENT COMPRISING ISOLATING TRENCHES AND A FIELD EFFECT TRANSISTOR AND ASSOCIATED PRODUCTION METHOD Public/Granted day:2011-03-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）