Invention Grant
- Patent Title: Method for manufacturing semiconductor element
- Patent Title (中): 半导体元件的制造方法
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Application No.: US13202027Application Date: 2010-02-04
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Publication No.: US08728916B2Publication Date: 2014-05-20
- Inventor: Hiroaki Tamemoto
- Applicant: Hiroaki Tamemoto
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2009-041966 20090225
- International Application: PCT/JP2010/051557 WO 20100204
- International Announcement: WO2010/098186 WO 20100902
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.
Public/Granted literature
- US20110298084A1 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT Public/Granted day:2011-12-08
Information query
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