Invention Grant
US08728916B2 Method for manufacturing semiconductor element 有权
半导体元件的制造方法

  • Patent Title: Method for manufacturing semiconductor element
  • Patent Title (中): 半导体元件的制造方法
  • Application No.: US13202027
    Application Date: 2010-02-04
  • Publication No.: US08728916B2
    Publication Date: 2014-05-20
  • Inventor: Hiroaki Tamemoto
  • Applicant: Hiroaki Tamemoto
  • Applicant Address: JP Anan-shi
  • Assignee: Nichia Corporation
  • Current Assignee: Nichia Corporation
  • Current Assignee Address: JP Anan-shi
  • Agency: Global IP Counselors, LLP
  • Priority: JP2009-041966 20090225
  • International Application: PCT/JP2010/051557 WO 20100204
  • International Announcement: WO2010/098186 WO 20100902
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Method for manufacturing semiconductor element
Abstract:
A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.
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