Invention Grant
US08728920B2 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
有权
具有控制栅极的肖特基二极管用于优化导通状态电阻，反向泄漏和反向击穿
- Patent Title: Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
- Patent Title (中): 具有控制栅极的肖特基二极管用于优化导通状态电阻，反向泄漏和反向击穿
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Application No.: US13486166Application Date: 2012-06-01
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Publication No.: US08728920B2Publication Date: 2014-05-20
- Inventor: Zia Alan Shafi , Jeffrey A. Babcock
- Applicant: Zia Alan Shafi , Jeffrey A. Babcock
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode.
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