Invention Grant
- Patent Title: Semiconductor device and method for manufacturing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13623340Application Date: 2012-09-20
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Publication No.: US08728926B2Publication Date: 2014-05-20
- Inventor: Zhongshan Hong
- Applicant: Semiconductor Manufacturing International Corporation , Semiconductor Manufacturing International Corporation
- Applicant Address: CN CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201110459120 20111231
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
The present invention discloses a method for manufacturing a semiconductor device. According to the method provided by the present disclosure, a dummy gate is formed on a substrate, removing the dummy gate to form an opening having side walls and a bottom gate, a dielectric material is formed on at least a portion of the sidewalls of the opening and the bottom surface of the opening, and a pre-treatment is performed to a portion of the dielectric material layer on the sidewalls of the opening, and thus the properties of the dielectric material is changed, and then the pre-treated dielectric material on the sidewalls of the opening is removed by a selective process. The semiconductor device manufactured by using the method of the present disclosure is capable of effectively reducing parasitic capacitance.
Public/Granted literature
- US20130168747A1 Semiconductor Device and Method for Manufacturing A Semiconductor Device Public/Granted day:2013-07-04
Information query
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