Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor manufacturing system
- Patent Title (中): 制造半导体器件和半导体制造系统的方法
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Application No.: US13761285Application Date: 2013-02-07
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Publication No.: US08728939B2Publication Date: 2014-05-20
- Inventor: Kazuhiro Maeda , Koichiro Nishizawa
- Applicant: Kazuhiro Maeda , Koichiro Nishizawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2012-124051 20120531
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A single-crystal substrate is placed on a supporting table while maintaining crystalline orientation of the single-crystal substrate. The single-crystal substrate has contacting regions on a periphery of an upper surface of the single-crystal substrate. Linear contacting surfaces of contacting pins are placed in contact with the contacting regions of the single-crystal substrate placed on the supporting table. Longitudinal directions on the contacting surfaces of all the contacting pins are not parallel to intersecting lines of the upper surface of the single-crystal substrate and cleaved surfaces of the single-crystal substrate.
Public/Granted literature
- US20130323910A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING SYSTEM Public/Granted day:2013-12-05
Information query
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