Invention Grant
US08728939B2 Method for manufacturing semiconductor device and semiconductor manufacturing system 有权
制造半导体器件和半导体制造系统的方法

Method for manufacturing semiconductor device and semiconductor manufacturing system
Abstract:
A single-crystal substrate is placed on a supporting table while maintaining crystalline orientation of the single-crystal substrate. The single-crystal substrate has contacting regions on a periphery of an upper surface of the single-crystal substrate. Linear contacting surfaces of contacting pins are placed in contact with the contacting regions of the single-crystal substrate placed on the supporting table. Longitudinal directions on the contacting surfaces of all the contacting pins are not parallel to intersecting lines of the upper surface of the single-crystal substrate and cleaved surfaces of the single-crystal substrate.
Information query
Patent Agency Ranking
0/0