Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method of same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13634784Application Date: 2011-03-02
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Publication No.: US08728941B2Publication Date: 2014-05-20
- Inventor: Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
- Applicant: Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
- Applicant Address: JP Osaka-Shi JP Kyoto-Shi
- Assignee: Sharp Kabushiki Kaisha,Hikaru Kobayashi
- Current Assignee: Sharp Kabushiki Kaisha,Hikaru Kobayashi
- Current Assignee Address: JP Osaka-Shi JP Kyoto-Shi
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Priority: JP2010-058973 20100316; JP2010-133474 20100611
- International Application: PCT/JP2011/054804 WO 20110302
- International Announcement: WO2011/114890 WO 20110922
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.
Public/Granted literature
- US20130005107A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SAME Public/Granted day:2013-01-03
Information query
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