Pattern forming method and manufacturing method of semiconductor device

Invention Grant

US08728943B2 Pattern forming method and manufacturing method of semiconductor device 有权

Title translation: 半导体器件的图案形成方法和制造方法

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Patent Title: Pattern forming method and manufacturing method of semiconductor device
Patent Title (中): 半导体器件的图案形成方法和制造方法
Application No.: US12926134

Application Date: 2010-10-27
Publication No.: US08728943B2

Publication Date: 2014-05-20
Inventor: Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
Applicant: Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
Priority: JP2004-008290 20040115
Main IPC: H01L21/311
IPC: H01L21/311

Pattern forming method and manufacturing method of semiconductor device

Abstract:

A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract(Chinese):

图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

Public/Granted literature

US20110070680A1 Pattern forming method and manufacturing method of semiconductor device Public/Granted day:2011-03-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀