Invention Grant
- Patent Title: Semi-conductive polyimide film
- Patent Title (中): 半导电聚酰亚胺薄膜
-
Application No.: US11727499Application Date: 2007-03-27
-
Publication No.: US08729217B2Publication Date: 2014-05-20
- Inventor: Masao Nakamura , Masahiro Kanbayashi , Yoshio Oota
- Applicant: Masao Nakamura , Masahiro Kanbayashi , Yoshio Oota
- Applicant Address: JP Osaka
- Assignee: Nitto Denko Corporation
- Current Assignee: Nitto Denko Corporation
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Main IPC: C08G69/26
- IPC: C08G69/26

Abstract:
The present invention provides a semi-conductive polyimide film having: a common logarithm of a surface resistivity at 25° C. and 60% RH of 9 to 15 log Ω/square; a common logarithm of a volume resistivity of 8 to 15 log Ω·cm; a fatigue stress in accordance with a fatigue test complying with JIS K7118, upon a number of repetition being 107, of 160 MPa or more; and a number of durable bending in accordance with an MIT test complying with JIS P8115 of 2,000 times or more, and an intermediate transfer belt and an transfer transportation belt using the semi-conductive polyimide film.
Public/Granted literature
- US20080242832A1 Semi-conductive polyimide film Public/Granted day:2008-10-02
Information query