Invention Grant
- Patent Title: Multilayer structure based on a negative differential resistance material
- Patent Title (中): 基于负极差电阻材料的多层结构
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Application No.: US13281186Application Date: 2011-10-25
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Publication No.: US08729518B2Publication Date: 2014-05-20
- Inventor: Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro , Warren Jackson
- Applicant: Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro , Warren Jackson
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
Public/Granted literature
- US20130099187A1 MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL Public/Granted day:2013-04-25
Information query
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