Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12718149Application Date: 2010-03-05
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Publication No.: US08729548B2Publication Date: 2014-05-20
- Inventor: Masaaki Hiroki , Shunpei Yamazaki
- Applicant: Masaaki Hiroki , Shunpei Yamazaki
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2001-079609 20010319
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming.An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.
Public/Granted literature
- US20100157165A1 Method of Manufacturing a Semiconductor Device Public/Granted day:2010-06-24
Information query
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