A silicon carbide semiconductor device includes a silicon carbide substrate, and a contact electrode. The silicon carbide substrate includes an n type region and a p type region in contact with the n type region. The contact electrode forms contact with the silicon carbide substrate. The contact electrode includes a first region containing TiSi, and a second region containing Al. The first region includes an n contact region in contact with the n type region and a p contact region in contact with the p type region. The second region is formed to contact the p type region and the n type region, and to surround the p contact region and the n contact region. Accordingly, there can be provided a silicon carbide semiconductor device including an electrode allowing ohmic contact with both a p type impurity region and an n type impurity region formed at a silicon carbide substrate.