A light emitting device includes a substrate, a first conductive type semiconductor layer disposed on the substrate, an active layer disposed on one part of the first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the active layer, a first electrode disposed on the second conductive type semiconductor layer, and a second electrode disposed on the other part of the first conductive type semiconductor layer, wherein a trench is formed at a portion of the second conductive type semiconductor layer, the active layer or the first conductive type semiconductor layer so that the trench is disposed under the first electrode.