Invention Grant
US08729577B2 Light-emitting device with head-to-tail P-type and N-type transistors
有权
具有头对端P型和N型晶体管的发光器件
- Patent Title: Light-emitting device with head-to-tail P-type and N-type transistors
- Patent Title (中): 具有头对端P型和N型晶体管的发光器件
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Application No.: US13670882Application Date: 2012-11-07
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Publication No.: US08729577B2Publication Date: 2014-05-20
- Inventor: Laurent Grenouillet , Maud Vinet
- Applicant: Commissariat A L′Energie Atomique Et Aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1160166 20111108
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light-emitting microelectronic device including a first N-type transistor (T1) and a second P-type transistor (T2), the respective gates of which are formed opposite one another, either side of an intrinsic semiconductor material region.
Public/Granted literature
- US20130113004A1 LIGHT-EMITTING DEVICE WITH HEAD-TO-TAIL P-TYPE AND N-TYPE TRANSISTORS Public/Granted day:2013-05-09
Information query
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