Invention Grant
- Patent Title: Semiconductor light-emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13744437Application Date: 2013-01-18
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Publication No.: US08729594B2Publication Date: 2014-05-20
- Inventor: Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-062611 20080312
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
Public/Granted literature
- US20130134458A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME Public/Granted day:2013-05-30
Information query
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