Invention Grant
US08729598B2 Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp 有权
发光二极管及其制造方法以及发光二极管灯

  • Patent Title: Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp
  • Patent Title (中): 发光二极管及其制造方法以及发光二极管灯
  • Application No.: US13577817
    Application Date: 2011-02-02
  • Publication No.: US08729598B2
    Publication Date: 2014-05-20
  • Inventor: Wataru NabekuraRyouichi Takeuchi
  • Applicant: Wataru NabekuraRyouichi Takeuchi
  • Applicant Address: JP Tokyo
  • Assignee: Showa Denko K.K.
  • Current Assignee: Showa Denko K.K.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2010-025352 20100208
  • International Application: PCT/JP2011/052172 WO 20110202
  • International Announcement: WO2011/096445 WO 20110811
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp
Abstract:
The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode (1) including: a compound semiconductor layer (2) including a light-emitting portion (7) containing a light-emitting layer (10); and a transparent substrate (3), wherein the compound semiconductor layer (2) and the transparent substrate (3) are bonded, and a first electrode (4) and a second electrode (5) are provided on the side of a main light-emitting surface (2a) of the compound semiconductor layer (2), wherein the transparent substrate (3) includes: an upper surface (3A) bonding to the compound semiconductor layer (2); a bottom surface (3B) having smaller dimensions than dimensions of the upper surface (3A); and a side surface including at least inclined surface (3b) inclined from the side of the upper surface toward the side of the bottom surface, wherein the first and second electrodes (4) and (5) are disposed within a region in which the bottom surface (3B) is projected when viewed from the top of the light-emitting diode.
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