Invention Grant
- Patent Title: Compound semiconductor device, method for manufacturing the device and electric device
- Patent Title (中): 复合半导体器件，器件制造方法及电气元件
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Application No.: US13334734Application Date: 2011-12-22
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Publication No.: US08729604B2Publication Date: 2014-05-20
- Inventor: Naoko Kurahashi
- Applicant: Naoko Kurahashi
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-027670 20110210
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/772
Abstract:
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein the gate electrode includes a gate base portion on the gate insulating film and a gate umbrella portion, and a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure.
Public/Granted literature
- US20120205717A1 COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE DEVICE AND ELECTRIC DEVICE Public/Granted day:2012-08-16
Information query
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