Invention Grant
- Patent Title: Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereof
- Patent Title (中): 集成电路包括通过连续鳍结构局部互连的多栅极晶体及其制造方法
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Application No.: US12711022Application Date: 2010-02-23
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Publication No.: US08729609B2Publication Date: 2014-05-20
- Inventor: Frank Scott Johnson , Andreas Knorr
- Applicant: Frank Scott Johnson , Andreas Knorr
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate and a plurality of locally interconnected multi-gate transistors. The plurality of locally interconnected multi-gate transistors includes a continuous fin structure formed on the substrate and first and second multi-gate transistors formed on the substrate and including first and second fin segments of the continuous fin structure, respectively. The continuous fin structure electrically interconnects the first and second multi-gate transistors.
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