Invention Grant
- Patent Title: Active matrix substrate and method for manufacturing the same
- Patent Title (中): 有源矩阵基板及其制造方法
-
Application No.: US13515571Application Date: 2010-12-07
-
Publication No.: US08729612B2Publication Date: 2014-05-20
- Inventor: Hiromitsu Katsui , Wataru Nakamura
- Applicant: Hiromitsu Katsui , Wataru Nakamura
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2009-299032 20091229
- International Application: PCT/JP2010/007102 WO 20101207
- International Announcement: WO2011/080879 WO 20110707
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11a) and the signal lines (16a), and each including a semiconductor layer (4a); and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a).
Public/Granted literature
- US20120248443A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-10-04
Information query
IPC分类: