Semiconductor device with vertical transistor

Invention Grant

US08729626B2 Semiconductor device with vertical transistor 有权

Title translation: 具有垂直晶体管的半导体器件

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Patent Title: Semiconductor device with vertical transistor
Patent Title (中): 具有垂直晶体管的半导体器件
Application No.: US12941252

Application Date: 2010-11-08
Publication No.: US08729626B2

Publication Date: 2014-05-20
Inventor: Yu Kosuge , Yasuhiko Ueda
Applicant: Yu Kosuge , Yasuhiko Ueda
Agency: Young & Thompson
Priority: JPP2009-257151 20091110
Main IPC: H01L29/66
IPC: H01L29/66

Semiconductor device with vertical transistor

Abstract:

A semiconductor device may include, but is not limited to: a semiconductor structure extending upwardly; a first insulating film covering at least a side surface of the semiconductor structure; a gate electrode extending upwardly, the gate electrode being adjacent to the first insulating film; and an insulating structure extending upwardly, the insulating structure being adjacent to the gate electrode.

Abstract(Chinese):

半导体器件可以包括但不限于：向上延伸的半导体结构; 覆盖半导体结构的至少一个侧表面的第一绝缘膜; 栅电极向上延伸，所述栅极与所述第一绝缘膜相邻; 以及向上延伸的绝缘结构，所述绝缘结构邻近所述栅电极。

Public/Granted literature

US20110108910A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-05-12

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的