Invention Grant
- Patent Title: Semiconductor structure with low resistance of substrate and low power consumption
- Patent Title (中): 半导体结构具有低电阻的基板和低功耗
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Application No.: US13305771Application Date: 2011-11-29
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Publication No.: US08729632B2Publication Date: 2014-05-20
- Inventor: Hsiu Wen Hsu , Chih Cheng Hsieh
- Applicant: Hsiu Wen Hsu , Chih Cheng Hsieh
- Applicant Address: TW New Taipei
- Assignee: Niko Semiconductor Co., Ltd.
- Current Assignee: Niko Semiconductor Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: TW100103795A 20110201
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A semiconductor structure comprising a semiconductor unit, a first conductive structure, a first conductive plug, and a second conductive structure is provided. The semiconductor unit has a substrate on a first side of the semiconductor unit. The substrate has at least a hole. The first conductive plug is in the hole and the hole may be full of the conductive plug. The first conductive structure is on the surface of the semiconductor unit. The surface is at the first side of the semiconductor unit. The second conductive structure is on a surface at a second side of the substrate of the semiconductor unit.
Public/Granted literature
- US20120193775A1 SEMICONDUCTOR STRUCTURE WITH LOW RESISTANCE OF SUBSTRATE AND LOW POWER CONSUMPTION Public/Granted day:2012-08-02
Information query
IPC分类:
