Invention Grant
- Patent Title: Yttrium contacts for germanium semiconductor radiation detectors
- Patent Title (中): 钇触点用于锗半导体辐射探测器
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Application No.: US13068811Application Date: 2011-05-20
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Publication No.: US08729656B2Publication Date: 2014-05-20
- Inventor: Ethan Hull , Richard Pehl , Bruce Suttle , James Lathrop
- Applicant: Ethan Hull , Richard Pehl , Bruce Suttle , James Lathrop
- Agency: Pitts & Lake, P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00 ; A61N5/00

Abstract:
A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
Public/Granted literature
- US20110298131A1 Yttrium contacts for germanium semiconductor radiation detectors Public/Granted day:2011-12-08
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