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US08729656B2 Yttrium contacts for germanium semiconductor radiation detectors 有权
钇触点用于锗半导体辐射探测器

Yttrium contacts for germanium semiconductor radiation detectors
Abstract:
A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
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