Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13846665Application Date: 2013-03-18
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Publication No.: US08729659B2Publication Date: 2014-05-20
- Inventor: Josef Maynollo
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece having a plurality of trenches formed therein, forming a liner over the workpiece, and forming a layer of photosensitive material over the liner. The layer of photosensitive material is removed from over the workpiece except from over at least a portion of each of the plurality of trenches. The layer of photosensitive material is partially removed from over the workpiece, leaving a portion of the layer of photosensitive material remaining within a lower portion of the plurality of trenches over the liner.
Public/Granted literature
- US20130221480A1 Semiconductor Devices and Methods of Manufacture Thereof Public/Granted day:2013-08-29
Information query
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