Invention Grant
- Patent Title: Integration substrate with a ultra-high-density capacitor and a through-substrate via
- Patent Title (中): 集成基板与超高密度电容器和贯通基板通孔
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Application No.: US12599494Application Date: 2008-05-08
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Publication No.: US08729665B2Publication Date: 2014-05-20
- Inventor: Johan H. Klootwijk , Freddy Roozeboom , Jaap Ruigrok , Derk Reefman
- Applicant: Johan H. Klootwijk , Freddy Roozeboom , Jaap Ruigrok , Derk Reefman
- Applicant Address: FR Caen
- Assignee: IPDIA
- Current Assignee: IPDIA
- Current Assignee Address: FR Caen
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: EP07107974 20070510
- International Application: PCT/IB2008/051824 WO 20080508
- International Announcement: WO2008/139393 WO 20081120
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.
Public/Granted literature
- US20100244189A1 INTEGRATION SUBSTRATE WITH A ULTRA-HIGH-DENSITY CAPACITOR AND A THROUGH-SUBSTRATE VIA Public/Granted day:2010-09-30
Information query
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