Invention Grant
- Patent Title: Adjustable resistor
- Patent Title (中): 可调电阻
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Application No.: US13552973Application Date: 2012-07-19
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Publication No.: US08729668B2Publication Date: 2014-05-20
- Inventor: Pascal Fornara , Arnaud Regnier
- Applicant: Pascal Fornara , Arnaud Regnier
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: The Noblitt Group, PLLC
- Priority: FR1157056 20110801
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
An adjustable resistor formed on a first insulating layer of a substrate, including: a first polysilicon layer covered with a second insulating layer of a first thickness, except in a region where the first polysilicon layer is covered with a thin insulator layer of a second thickness smaller than the first thickness; a second polysilicon layer covering the second insulating layer and the thin insulator layer; on each side of the second insulating layer and at a distance from it, a first and a second conductive vias providing access to the terminals of the resistor on the first polysilicon layer; and a third conductive via providing access to a contacting area on the second polysilicon layer.
Public/Granted literature
- US20130032926A1 ADJUSTABLE RESISTOR Public/Granted day:2013-02-07
Information query
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