Invention Grant
US08729671B2 Method for increasing the area of non-polar and semi-polar nitride substrates
有权
增加非极性和半极性氮化物衬底面积的方法
- Patent Title: Method for increasing the area of non-polar and semi-polar nitride substrates
- Patent Title (中): 增加非极性和半极性氮化物衬底面积的方法
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Application No.: US13327521Application Date: 2011-12-15
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Publication No.: US08729671B2Publication Date: 2014-05-20
- Inventor: Asako Hirai , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Asako Hirai , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
Public/Granted literature
- US20120086106A1 METHOD FOR INCREASING THE AREA OF NON-POLAR AND SEMI-POLAR NITRIDE SUBSTRATES Public/Granted day:2012-04-12
Information query
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