Invention Grant
- Patent Title: Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
- Patent Title (中): 半导体衬底，电子器件和半导体衬底的制造方法
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Application No.: US13131498Application Date: 2009-11-26
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Publication No.: US08729677B2Publication Date: 2014-05-20
- Inventor: Sadanori Yamanaka , Masahiko Hata , Tomoyuki Takada
- Applicant: Sadanori Yamanaka , Masahiko Hata , Tomoyuki Takada
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Chemical Company, Limited
- Current Assignee: Sumitomo Chemical Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-305415 20081128
- International Application: PCT/JP2009/006404 WO 20091126
- International Announcement: WO2010/061616 WO 20100603
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A semiconductor wafer including: a base wafer; a seed crystal disposed on the base wafer; a compound semiconductor disposed above the seed crystal; and a high resistance layer disposed between the seed crystal and the compound semiconductor, the high resistance layer having a larger resistivity than the seed crystal, and the seed crystal lattice matching or pseudo lattice matching the compound semiconductor is provided.
Public/Granted literature
- US20110227129A1 SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE Public/Granted day:2011-09-22
Information query
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