Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13676569Application Date: 2012-11-14
-
Publication No.: US08729680B2Publication Date: 2014-05-20
- Inventor: Narue Kobayashi , Tomoharu Fujii , Yukiharu Takeuchi
- Applicant: Shinko Electric Industries Co., Ltd.
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-294434 20091225
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/12 ; H01L23/34

Abstract:
A semiconductor device includes a structure in which a semiconductor element (chip) is mounted in a cavity formed in a wiring board with an adhesive interposed between the chip and a bottom surface of the cavity, and electrode terminals of the chip are connected via wires to wiring portions formed on the board around the cavity. The chip is mounted in close contact with a side wall of the cavity, the side wall being near a region where a wiring for higher frequency compared with other wirings within the wiring portion is formed. A recessed portion is provided in a region of the bottom surface of the cavity, and a thermal via extending from the bottom surface of the recessed to the outside of the board is provided, the region being near a portion where the chip is in close contact.
Public/Granted literature
- US20130163206A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-06-27
Information query
IPC分类: