A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through-hole; a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film. A gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface.