Invention Grant
- Patent Title: Semiconductor relay
- Patent Title (中): 半导体继电器
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Application No.: US12812587Application Date: 2009-01-15
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Publication No.: US08729740B2Publication Date: 2014-05-20
- Inventor: Narutoshi Hoshino , Yuichi Niimura , Shinsuke Taka , Sachiko Mugiuda
- Applicant: Narutoshi Hoshino , Yuichi Niimura , Shinsuke Taka , Sachiko Mugiuda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-009831 20080118
- International Application: PCT/JP2009/050472 WO 20090115
- International Announcement: WO2009/091000 WO 20090723
- Main IPC: H01H19/14
- IPC: H01H19/14

Abstract:
A semiconductor relay of the invention includes first and second signal terminals, a substrate, a first switch circuit and a control circuit. The substrate includes signal patterns for forming a signal line between the first and second signal terminals. The first switch circuit has a semiconductor switch used to make or break the connection between the first and second signal terminals. The control circuit has a control IC for controlling the first switch circuit. The control IC is mounted on a land of the substrate. The land has a size corresponding to the control IC. A part or all of the land is included in a part of the signal patterns.
Public/Granted literature
- US20100295602A1 SEMICONDUCTOR RELAY Public/Granted day:2010-11-25
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