Invention Grant
- Patent Title: RF-driven ion source with a back-streaming electron dump
- Patent Title (中): RF驱动的离子源带有背流电子转储
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Application No.: US13014956Application Date: 2011-01-27
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Publication No.: US08729806B2Publication Date: 2014-05-20
- Inventor: Joe Kwan , Qing Ji
- Applicant: Joe Kwan , Qing Ji
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Lawrence Berkeley National Laboratory
- Main IPC: H05B31/26
- IPC: H05B31/26

Abstract:
A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage.
Public/Granted literature
- US20110226422A1 RF-DRIVEN ION SOURCE WITH A BACK-STREAMING ELECTRON DUMP Public/Granted day:2011-09-22
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