Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13030372Application Date: 2011-02-18
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Publication No.: US08729956B2Publication Date: 2014-05-20
- Inventor: Jung-hyun Kim
- Applicant: Jung-hyun Kim
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2010-0017267 20100225
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor device is provided, including a charge-pumping unit configured to charge-pump power voltage in every period of a pumping clock to generate pumping voltage, a first voltage level detection unit configured to detect a maximum voltage level of the generated pumping voltage, a second voltage level detection unit configured to detect a minimum voltage level of the generated pumping voltage, and a pumping clock generating unit configured to generate the pumping clock, the pumping clock having a frequency that is adjusted in response to an output signal of the first and the second voltage level detection units.
Public/Granted literature
- US20110204963A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
Information query
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