Invention Grant
US08730452B2 Source and mask optimization by changing intensity and shape of the illumination source and magnitude and phase of mask diffraction orders
有权
通过改变照明源的强度和形状以及掩模衍射级的幅度和相位来进行源和掩模优化
- Patent Title: Source and mask optimization by changing intensity and shape of the illumination source and magnitude and phase of mask diffraction orders
- Patent Title (中): 通过改变照明源的强度和形状以及掩模衍射级的幅度和相位来进行源和掩模优化
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Application No.: US12962522Application Date: 2010-12-07
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Publication No.: US08730452B2Publication Date: 2014-05-20
- Inventor: Robert Socha
- Applicant: Robert Socha
- Applicant Address: NL Veldhoven
- Assignee: ASML Masktools B.V.
- Current Assignee: ASML Masktools B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/52
- IPC: G03B27/52

Abstract:
An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas ad centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask OCPL(x,y) is then formed.
Public/Granted literature
- US20110075124A1 Source and Mask Optimization By Changing Intensity and Shape of the Illumination Source Public/Granted day:2011-03-31
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