Invention Grant
- Patent Title: Method and apparatus for measuring of masks for the photo-lithography
- Patent Title (中): 用于光刻的掩模的测量方法和装置
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Application No.: US12933226Application Date: 2009-03-19
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Publication No.: US08730474B2Publication Date: 2014-05-20
- Inventor: Thomas Scheruebl , Holger Seitz , Ulrich Matejka , Axel Zibold , Rigo Richter
- Applicant: Thomas Scheruebl , Holger Seitz , Ulrich Matejka , Axel Zibold , Rigo Richter
- Applicant Address: DE Jena
- Assignee: Carl Zeiss SMS GmbH
- Current Assignee: Carl Zeiss SMS GmbH
- Current Assignee Address: DE Jena
- Agency: Fish & Richardson P.C.
- Priority: DE102008015631 20080320
- International Application: PCT/EP2009/002030 WO 20090319
- International Announcement: WO2009/115329 WO 20090924
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G01B11/14 ; G01N21/00 ; G01B11/04 ; G01B11/08 ; G06K9/00

Abstract:
The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.
Public/Granted literature
- US20110016437A1 METHOD AND APPARATUS FOR MEASURING OF MASKS FOR THE PHOTO-LITHOGRAPHY Public/Granted day:2011-01-20
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