Invention Grant
US08730710B2 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
有权
具有堆叠结构的半导体存储器件，包括基于电阻开关的逻辑电路及其制造方法
- Patent Title: Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
- Patent Title (中): 具有堆叠结构的半导体存储器件，包括基于电阻开关的逻辑电路及其制造方法
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Application No.: US14017856Application Date: 2013-09-04
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Publication No.: US08730710B2Publication Date: 2014-05-20
- Inventor: In-gyu Baek , Hong-sun Hwang , Hak-soo Yu , Chul-woo Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0086581 20100903
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Semiconductor memory device having a stacking structure including resistor switch based logic circuits. The semiconductor memory device includes a first conductive line that includes a first line portion and a second line portion, wherein the first line portion and the second line portion are electrically separated from each other by an intermediate region disposed between the first and second line portions, a first variable resistance material film that is connected to the first line portion and stores data, and a second variable resistance material film that controls an electrical connection between the first line portion and the second line portion.
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