Invention Grant
US08730714B2 Magnetic tunnel junction and spin transfer torque random access memory having the same
有权
磁隧道结和自旋转移转矩随机存取存储器具有相同的功能
- Patent Title: Magnetic tunnel junction and spin transfer torque random access memory having the same
- Patent Title (中): 磁隧道结和自旋转移转矩随机存取存储器具有相同的功能
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Application No.: US13336102Application Date: 2011-12-23
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Publication No.: US08730714B2Publication Date: 2014-05-20
- Inventor: Seung Hyun Lee
- Applicant: Seung Hyun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0078969 20110809
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer.
Public/Granted literature
- US20130039121A1 MAGNETIC TUNNEL JUNCTION AND SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY HAVING THE SAME Public/Granted day:2013-02-14
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