Invention Grant
- Patent Title: Reduction of read disturb errors in NAND FLASH memory
- Patent Title (中): 减少NAND FLASH存储器中的读取干扰误差
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Application No.: US13481927Application Date: 2012-05-28
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Publication No.: US08730721B2Publication Date: 2014-05-20
- Inventor: Charles J. Camp , Holloway H. Frost
- Applicant: Charles J. Camp , Holloway H. Frost
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Locke Lord LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Methods and apparatuses for reduction of Read Disturb errors in a NAND FLASH memory system utilizing modified or extra FLASH memory cells.
Public/Granted literature
- US20120236639A1 Reduction of Read Disturb Errors in NAND FLASH Memory Public/Granted day:2012-09-20
Information query
