Invention Grant
US08730722B2 Saving of data in cases of word-line to word-line short in memory arrays
有权
在字线的情况下将数据保存到存储器阵列中的字线短路
- Patent Title: Saving of data in cases of word-line to word-line short in memory arrays
- Patent Title (中): 在字线的情况下将数据保存到存储器阵列中的字线短路
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Application No.: US13411115Application Date: 2012-03-02
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Publication No.: US08730722B2Publication Date: 2014-05-20
- Inventor: Pao-Ling Koh , Tien-Chien Kuo
- Applicant: Pao-Ling Koh , Tien-Chien Kuo
- Applicant Address: US TN Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TN Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Technique of operating a non-volatile memory are presented so that in case data that would otherwise be lost in the case of a word line to word line short is preserved. Before writing a word line, the data from a previously written adjacent is word line is read back and stored in data latches associated with the corresponding bit lines, but that are not being used for the data to be written. If a short occurs, as the data for both word lines is still in the latches, it can be written to a new location. This technique can also be incorporated into cache write operations and for a binary write operation inserted into a pause of a multi-state write.
Public/Granted literature
- US20130229868A1 Saving of Data in Cases of Word-Line to Word-Line Short in Memory Arrays Public/Granted day:2013-09-05
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