Invention Grant
- Patent Title: Common line current for program level determination in flash memory
- Patent Title (中): 闪存中程序级确定的通用电流
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Application No.: US13569024Application Date: 2012-08-07
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Publication No.: US08730724B2Publication Date: 2014-05-20
- Inventor: Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
- Applicant: Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56
Abstract:
In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
Public/Granted literature
- US20140043898A1 Common Line Current for Program Level Determination in Flash Memory Public/Granted day:2014-02-13
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