The present disclosure relates to the fabrication of non-volatile memory devices. In at least one embodiment, a single transistor may be used to drive each address line, either a wordline or a bitline. Both an inhibit voltage and a selection voltage may be driven through these single transistor devices, which may be achieved with the introduction of odd and even designations for the address lines. In one operating embodiment, a selected address line may be driven to a selection voltage, and the address lines of the odd or even designation which is the same as the selected address line are allowed to float. The address lines of the odd or even designation with is different from the selected address lines are driven to an inhibit voltage, wherein adjacent floating address lines may act as shielding lines to the selected address line.