Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US13217430Application Date: 2011-08-25
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Publication No.: US08731018B2Publication Date: 2014-05-20
- Inventor: Kimio Shigihara , Takuto Maruyama , Akihito Ohno
- Applicant: Kimio Shigihara , Takuto Maruyama , Akihito Ohno
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2011-015414 20110127
- Main IPC: H01S5/125
- IPC: H01S5/125 ; H01S5/343
Abstract:
A semiconductor laser includes: a DBR (Distributed Bragg Reflector) region having a diffraction grating; a FP (Fabry-Perot) region having no diffraction grating; and an optical waveguide section placed between the DBR region and an outputting end surface. A length of the optical waveguide section is longer than a length of the DBR region in a resonator length direction.
Public/Granted literature
- US20120195337A1 SEMICONDUCTOR LASER Public/Granted day:2012-08-02
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