Invention Grant
US08732391B2 Obsolete block management for data retention in nonvolatile memory
有权
用于非易失性存储器中数据保留的过时块管理
- Patent Title: Obsolete block management for data retention in nonvolatile memory
- Patent Title (中): 用于非易失性存储器中数据保留的过时块管理
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Application No.: US13453898Application Date: 2012-04-23
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Publication No.: US08732391B2Publication Date: 2014-05-20
- Inventor: Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
- Applicant: Zac Shepard , Steven T. Sprouse , Chris Nga Yee Avila , Neil David Hutchison
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02
Abstract:
In a nonvolatile memory array, blocks that contain only obsolete data are modified by adding charge to their cells, increasing the charge level from the programmed charge levels that represented obsolete data to elevated charge levels. The increase in overall charge in such blocks lessens the tendency of such blocks to impact data retention in neighboring blocks.
Public/Granted literature
- US20130282958A1 Obsolete Block Management for Data Retention in Nonvolatile Memory Public/Granted day:2013-10-24
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