Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13524894Application Date: 2012-06-15
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Publication No.: US08732466B2Publication Date: 2014-05-20
- Inventor: Yuji Nagai , Toshihiro Suzuki , Noboru Shibata , Taku Kato , Tatsuyuki Matsushita
- Applicant: Yuji Nagai , Toshihiro Suzuki , Noboru Shibata , Taku Kato , Tatsuyuki Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-265289 20111202
- Main IPC: H04L9/32
- IPC: H04L9/32

Abstract:
According to one embodiment, a device includes a first memory area to store a first key. A second memory area stores encrypted secret identification (ID) information generated from secret ID information with a family key. A third memory area stores a family key block including data generated from the family key with an ID key. An authentication module performs authentication. A second key is generated from a first number with the first key, a session key is generated from a random number with the second key, and authentication information is generated from the secret ID information with the session key. The encrypted secret ID information, family key block and the authentication information is output.
Public/Granted literature
- US20130145164A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-06-06
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