A method is provided for using bad blocks in flash memory. The method includes placing in a replacement area of the flash memory a special bad block that meets a “still usable” condition from the bad blocks of the flash memory. The method also includes receiving a use request for using the special bad block in the replacement area to store user data, writing the user data into the special bad block, and determining whether the user data is successfully written into the special bad block. Further, the method includes placing the special bad block back into the replacement area for a next use request when it is determined that the user data is not successfully written into the special bad block.