Invention Grant
- Patent Title: MEMS stress concentrating structure for MEMS sensors
- Patent Title (中): MEMS传感器的MEMS应力集中结构
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Application No.: US12873684Application Date: 2010-09-01
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Publication No.: US08733176B2Publication Date: 2014-05-27
- Inventor: Ping Wai Li
- Applicant: Ping Wai Li
- Applicant Address: HK Hong Kong
- Assignee: Kontel Data System Limited
- Current Assignee: Kontel Data System Limited
- Current Assignee Address: HK Hong Kong
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G01L9/06
- IPC: G01L9/06

Abstract:
A stress concentrating apparatus and a method for a MicroElectroMechanical System (MEMS) sensors is provided. The apparatus includes a plate having an inner region and outer region, the inner region being separated from the outer region by slits defined in the plate. A stress concentrator bridge connects the inner region to the outer region, and to mechanically amplify stress applied on the inner region of the plate. At least one stress sensor is operatively connected to the stress concentrator bridge, whereby the at least one stress sensor converts the mechanically amplified stress applied on the inner region into an electrical signal.
Public/Granted literature
- US20110048138A1 MEMS STRESS CONCENTRATING STRUCTURE FOR MEMS SENSORS Public/Granted day:2011-03-03
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