Invention Grant
US08734008B2 Voltage reading technique for large sensor arrays through reduced noise differential path 有权
通过降低噪声差分路径的大型传感器阵列的电压读数技术

  • Patent Title: Voltage reading technique for large sensor arrays through reduced noise differential path
  • Patent Title (中): 通过降低噪声差分路径的大型传感器阵列的电压读数技术
  • Application No.: US13127906
    Application Date: 2009-11-03
  • Publication No.: US08734008B2
    Publication Date: 2014-05-27
  • Inventor: Matias N. Troccoli
  • Applicant: Matias N. Troccoli
  • Applicant Address: NO Nesoya
  • Assignee: Next Biometrics AS
  • Current Assignee: Next Biometrics AS
  • Current Assignee Address: NO Nesoya
  • Agency: Duane Morris LLP
  • International Application: PCT/US2009/063055 WO 20091103
  • International Announcement: WO2010/053894 WO 20100514
  • Main IPC: G01N25/00
  • IPC: G01N25/00
Voltage reading technique for large sensor arrays through reduced noise differential path
Abstract:
An active sensor apparatus includes an array of sensor elements arranged in a plurality of columns and rows of sensor elements. The sensor apparatus includes a plurality of column and row thin film transistor switches for selectively activating the sensor elements, and a plurality of column and row thin film diodes for selectively accessing the sensor elements to obtain information from the sensor elements. The thin film transistor switches and thin film diodes are formed on a common substrate.
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