Invention Grant
- Patent Title: Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere
- Patent Title (中): 在惰性气氛中通过高温退火来增强掺杂碳化硅锂化的方法
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Application No.: US13457070Application Date: 2012-04-26
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Publication No.: US08734674B1Publication Date: 2014-05-27
- Inventor: Mark C. Hersam , Albert L. Lipson , Sudeshna Bandyopadhyay , Hunter J. Karmel , Michael J. Bedzyk
- Applicant: Mark C. Hersam , Albert L. Lipson , Sudeshna Bandyopadhyay , Hunter J. Karmel , Michael J. Bedzyk
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agency: Reinhart Boerner Van Deuren s.c.
- Main IPC: H01M4/88
- IPC: H01M4/88
Abstract:
A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
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