Invention Grant
- Patent Title: Metal plating using seed film
- Patent Title (中): 使用种子膜进行金属电镀
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Application No.: US13723573Application Date: 2012-12-21
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Publication No.: US08734957B2Publication Date: 2014-05-27
- Inventor: Eugene P. Marsh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: C23C16/02
- IPC: C23C16/02
Abstract:
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal layers is no greater than a monolayer. The seed film also includes either one or more conductive metal oxide layers or one or more silicon oxide layers, where either layer is no greater than a monolayer. The seed film can be used in plating, including electroplating, conductive layers, over at least a portion of the seed film. Conductive layers formed with the seed film can be used in fabricating an integrated circuit, including fabricating capacitor structures in the integrated circuit.
Public/Granted literature
- US20130130053A1 Metal Plating Using Seed Film Public/Granted day:2013-05-23
Information query
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