Invention Grant
- Patent Title: Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device
- Patent Title (中): 能够控制晶片表面的元件的电性能的变化的半导体器件的制造系统以及半导体器件的制造方法
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Application No.: US12251558Application Date: 2008-10-15
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Publication No.: US08735181B2Publication Date: 2014-05-27
- Inventor: Osamu Fujii , Yoshimasa Kawase , Hisato Oyamatsu , Takeshi Shibata
- Applicant: Osamu Fujii , Yoshimasa Kawase , Hisato Oyamatsu , Takeshi Shibata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2007-271513 20071018
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.
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