Invention Grant
- Patent Title: Method for detecting embedded voids in a semiconductor substrate
- Patent Title (中): 用于检测半导体衬底中的嵌入孔的方法
-
Application No.: US13490828Application Date: 2012-06-07
-
Publication No.: US08735182B2Publication Date: 2014-05-27
- Inventor: Leonardus Leunissen , Sandip Halder , Eric Beyne
- Applicant: Leonardus Leunissen , Sandip Halder , Eric Beyne
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP11168942 20110607
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/00
Abstract:
A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.
Public/Granted literature
- US20120315712A1 Method for Detecting Embedded Voids in a Semiconductor Substrate Public/Granted day:2012-12-13
Information query
IPC分类:
